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INFRARED DIODE LASER 785nm 1~100mW

INFRARED DIODE LASER 785nm 1~100mW

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Product No. 470032

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Wavelength 785±5nm
Power 1~100mW
Operating Mode CW
Horizontalr > 10, 20, …, 100nW
Power Stability (rms,over 4 hours) <1%, <2%, <3% (<0.5%, optional) (<0.5%, optional)
Transverse Mode Near TEM00
Beam diameter at the aperture (1/e²,mm) ~4
Beam Divergence, full angle <1.0 mrad
Polarization Ratio >50:1 (>100:1, Optional)Horizontal±5 °(Vertical Optional)
Warm-up Time <5min
Beam Height From Base Plate 24.8mm
Operating Temperatur 10-35℃
Central wavelength (nm) 785±5
Operating mode CW
Horizontalr (mW) > 10, 20, …, 100
Power stability  (rms, over 4 hours) <1%, <2%, <3% (<0.5%, optional)
Transverse mode Near TEM00
M2 factor <1.5
Beam diameter at the aperture (1/e2,mm) ~4
Beam divergence, full angle  (mrad) <1
Polarization ratio >50:1 (>100:1, optional)
Horizontal±5 degree (Vertical Optional)
Warm-up Time (minutes) <5
Pointing stability after warm-up(mrad) <0.05
Beam height from base plate (mm) 24.8
Operating temperature  (℃) 10~35
 Power supply 85-264VAC 4700P1 / 4700P2  (Frequency for 1Hz-30kHz)
100-240VAC 4700P4  (Frequency for 30kHz -100kHz)
 TTL / Analog modulation 10KHz-30KHz 30kHz-100kHz
Expected lifetime (hours) 10000
Warranty 1 year
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