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Home  Products  CW Laser  470033

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INFRARED DIODE LASER 808nm 1~2500mW

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Parameters Related Products Description

Wavelength 808±3nm

Power 1~2500mW

Operating Mode CW

Horizontalr ＞1, 100, 200, 300, …, 2500nW

Power Stability (rms,over 4 hours) ＜1%, ＜2%, ＜3% (＜0.5%, optional)

Transverse Mode Multimode

Beam diameter at the aperture (1/e²,mm) ~5×8

Beam Divergence, full angle ＜3.0 mrad

Polarization Ratio /

Warm-up Time ＜5min

Beam Height From Base Plate 24.8mm

Operating Temperatur 10-35℃

INFRARED DIODE LASER 808nm 3~6W

INFRARED DIODE LASER 830nm 1~120mW

INFRARED DIODE LASER 852nm 1~150mW

INFRARED DIODE LASER 905nm 1~70mW

Central wavelength (nm)		808±3
Operating mode		CW
Horizontalr (mW)		>1, 100, 200, 300, …, 2500
Power stability (rms, over 4 hours)		<1%, <2%, <3% (<0.5%, optional)
Transverse mode		Multimode
Dimensions of beam at the aperture (mm) (mm)		~5×8
Beam divergence, full angle (mrad)		<3. 0
Warm-up Time (minutes)		<5
Beam height from base plate (mm)		24. 8
Operating temperature (℃)		10~35
Power supply	85-264VAC	4700P1 / 4700P2 (Frequency for 1Hz-30kHz)
	100-240VAC	4700P4 (Frequency for 30kHz -100kHz)
TTL / Analog modulation		10KHz-30KHz 30kHz-100kHz
Expected lifetime (hours)		10000
Warranty		1 year

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